Simulation of High-Efficiency Resonant-Cavity-Enhanced GeSn Single-Photon Avalanche Photodiodes for Sensing and Optical Quantum Applications
نویسندگان
چکیده
Two novel resonant-cavity-enhanced (RCE) GeSn single-photon avalanche photodiode (SPAD) detectors are designed and simulated for high-efficiency detection at 1550 2000 nm wavelength room temperature sensing optical quantum applications. The RCE SPAD consists of a PIPIN GeSn/Si heterostructures embedded in an cavity formed by distributed Bragg reflector (DBR) surface. results show that high photon absorption efficiency triggering probabilities can be achieved careful design DBR reflectors, absorber, doping concentrations Si charge sheet layer multiplication layer, which lead to (SPDE) ~80%, is promising emerging applications demanding SPDE, such as linear computing. noise equivalent power (NEP) dark count rate (DCR) function threading dislocations density (TDD) examined well. It found the device could operate near with similar DCR level Ge operating low temperature. A NEP $\sim 3\times 10^{-15}$ W/Hz notation="LaTeX">$^{1/2}$ observed from This work shows proposed SPADs candidates short-wave infrared (SWIR) regime
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ژورنال
عنوان ژورنال: IEEE Sensors Journal
سال: 2021
ISSN: ['1558-1748', '1530-437X']
DOI: https://doi.org/10.1109/jsen.2021.3074407